器件名称: 2N3442
功能描述: 10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
文件大小: 135.65KB 共4页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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High-Power Industrial Transistors
NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Collector –Emitter Sustaining Voltage — VCEO(sus) = 140 Vdc (Min) Excellent Second Breakdown Capability
2N3442
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
CASE 1–07 TO–204AA (TO–3)
*MAXIMUM RATINGS
Rating
Symbol VCEO VCB VEB IC IB
Value 140 160 7.0
Unit Vdc Vdc Vdc Adc Adc
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage
Collector Current — Continuous Collector Current — Peak Base Current — Continuous Peak
10 15** 7.0 —
Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range
PD
117 0.67
Watts W/_C
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RθJC
Max 1.5
Unit
Thermal Resistance, Junction to Case
_C/W
* Indicates JEDEC Registered Data. ** This data guaranteed in addition to JEDEC registered data.
REV 7
Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
2N3442 v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise note……
