器件名称: 2N3442
功能描述: NPN HIGH POWER SILICON TRANSISTOR
文件大小: 56.41KB 共3页
简 介:TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/370 Devices 2N3442 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VCER VEBO IB IC PT TJ, Tstg Symbol RθJC
Value
140 160 150 7.0 7.0 10 6.0 117 -55 to +200 Max. 1.5
Units
Vdc Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range
TO-3* (TO-204AA)
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.2 mW/0C for TA > 250C 2) Derate linearly 668 mW/0C for TC > 250C
0
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO V(BR)CER V(BR)CEX ICEX IEBO Min. 140 150 160 1.0 1.0 Max. Unit Vdc Vdc Vdc mAdc mAdc
OFF CHARACTERISTICS
Collector-Emitter Voltage IC = 3.0 Adc Collector-Emitter Breakdown Voltage IC = 1.5 Adc, RBE = 100 Collector-Emitter Breakdown Voltage IC = 1.5 Adc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 140 Vdc, VEB = 1.5 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc
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2N3442 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol hFE VCE(sat) VBE Min. 20 Max. 70 1.0 1.7 Vdc Vdc Unit
ON CHARACTERISTICS ……
