器件名称: 2N3442
功能描述: HIGH POWER INDUSTRIAL TRANSISTORS
文件大小: 203.51KB 共3页
简 介:2N3442 2N4347
HIGH POWER INDUSTRIAL TRANSISTORS
NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347 Collector-Emitter Sustaining VoltageVCEO(sus) = 120 Vdc (Min) – 2N4347 140 Vdc (Min) – 2N3442 Excellent Second-Breakdown Capability
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCB VEB IC
Ratings
#Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Peak Continuous 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442
Value
120 140 140 160 7.0 5.0 10 10 15 (**) 3.0 7.0 8.0 100 117 0.57 0.67 -65 to +200
Unit
V Vdc Vdc
Adc
IB
Base Current Peak Total Device Dissipation @ TC = 25° Derate above 25° Junction Temperature Storage Temperature
Adc
PD TJ TS
Watts W/°C °C °C
(**) This data guaranteed in addition to JEDEC registered data.
COMSET SEMICONDUCTORS
1/3
2N3442 2N4347
THERMAL CHARACTERISTICS Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case 2N4347 2N3442
Value
1.75 1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS) VCER(SUS) RBE=100 ICEO
Ratings
Collector-Emitter Sustaining Voltage (1) Collector-Emitter Sustaining Voltage Collector-Emitter Current
Test Condi……
