器件名称: 2N3442
功能描述: Silicon NPN Power Transistors
文件大小: 130.37KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3442
DESCRIPTION
With TO-3 package Excellent safe operating area
APPLICATIONS
For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 140 7 10 15 117 150 -65~200 UNIT V V V A A W ℃ ℃
THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=10A; IB=2A IC=10A ; VCE=4V VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150℃ VEB=7V; IC=0 IC=3A ; VCE=4V IC=10A ; VCE=4V IC=2.0A ; VCE=4V;ft=40kHz 20 7.5 80 MIN ……
