器件名称: 3DD13003
功能描述: Plastic-Encapsulated Transistors
文件大小: 59.54KB 共1页
简 介:Transys
Electronics
L I M I T E D
TO-220 Plastic-Encapsulated Transistors
3DD13003
FEATURES Power dissipation PCM:
TRANSISTOR (NPN)
TO-220
1. BASE
1.5
W (Tamb=25℃)
2. COLLECTOR 3. EMITTER
Collector current 1.5 A ICM: Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) VBE fT tf ts VCE= 10V, IC= 0.5 mA
123
TJ, Tstg: -55℃ to +150℃
unless otherwise specified)
Test conditions MIN 700 400 9 1000 500 1000 8 5 1 1.2 3 5 0.5 2.5 V V V MHZ S S 40 TYP MAX UNIT V V V A A A
Ic= 1000A, IE=0 Ic= 10mA, IB=0 IE= 1000A, IC=0 VCB= 700V, IE=0 VCE= 400V, IB=0 VEB= 9V, IC=0 VCE= 2V, IC= 0.5 A
IC=1000mA, IB=250 mA IC=1000mA, IB= 250mA IE= 2000 mA Ic=100mA, VCE=10V f=1MHZ Vcc=100V, Ic=1A IB1=-IB2=0.2A
CLASSIFICATION OF hFE(1)
Rank Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40
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