器件名称: 3DD13003B
功能描述: NPNPlastic-Encapsulate Transistor
文件大小: 145.94KB 共3页
简 介:WEITRON
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
3DD13003B
FEATURES :
power switching applications
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ Tstg
Value
700 400 9 1.5 0.9 150 -55 to +150
Units
V V V A W °C °C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Fall time Storage time
CLASSIFICATION OF h FE
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO I CBO ICEO IEBO hFE V CE(sat)1 VCE(sat)2 V BE(sat) fT tf ts
Test conditions
IC= 1mA, IE=0 IC= 10mA, IB=0 IE= 1mA, IC=0 VCB= 700V, IE=0 VCE= 400V, IB=0 VEB= 7V, IC=0 VCE= 10V, IC= 0.4 A IC=1.5A,IB= 0.5A IC=0.5A, IB= 0.1A IC=0.5A, IB=0.1A VCE=10V,IC=100mA, f =1MHz IC=1A IB1=-IB2=0.2A
MIN
700 400 9
TYP
MAX
Units
V V V
100 50 10 20 40 3 0.8 1 4 0.7 4
A A A V V V MHz s s
Rank Range 20-25 25-30 30-35 35-40
WEITRON
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10-Nov-2010
3DD13003B
Typical Characteristics
WEITRON
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10-Nov-2010
3DD13003B
TO-92 Outl……
