器件名称: 3DD13003-TO-126
功能描述: TRANSISTOR
文件大小: 887.95KB 共3页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003
TRANSISTOR( NPN )
TO— 126
FEATURES Power dissipation PCM : 1.25 W(Tamb=25℃) Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J ,T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS( Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) VBE fT tf ts
1.BASE 2.COLLECTOR 3.EMITTER
123
unless
Test
otherwise
specified)
TYP MAX UNIT V V V 1000 500 1000 8 5 1 1.2 3 5 0.5 2.5 V V V MHz s s 40 A A A
conditions
MIN 700 400 9
Ic= 1000μA, IE=0 Ic= 10 mA, IB=0
IE= 1000μA, IC=0 VCB= 700 VCE= 400 VEB= 9 V, IE=0 V, IB=0 V, IC=0
VCE= 2 V, IC= 0.5 A VCE= 10 V, IC= 0.5 mA IC=1000m A,IB= 250 m A IC=1000mA, IB= 250m A IE= 2000 mA VCE=10V,Ic=100mA f =1MHz IC=1A, I B1=-IB2=0.2A
VCC=100V
CLASSIFICATION OF HFE(1)
Rank Range 8-15 15-20 20-25 25-30 30-35 35-40
TO-126 PACKAGE OUTLINE DIMENSIONS
D
A1
A
E
b1 L
e e1
L1 b C Dimensions In Millimeters Min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 2.290TYP 4.480 15.300 2.100 3.900 3.000 4.680 15.700 2.300 4.……