器件名称: 3DD13003-TO-220
功能描述: TRANSISTOR ( NPN )
文件大小: 146.63KB 共2页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13003
FEATURES
TRANSISTOR ( NPN )
TO-220
1. BASE 2. COLLECTOR 3. EMITTER
power switching applications
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 700 400 9 1.5 2 -55-150 Units V V V A W ℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain hFE（2） Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) VBE fT tf ts Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE（1）
unless
Test
otherwise
specified)
MIN 700 400 9 1000 500 1000 8 5 1 1.2 3 5 0.5 2.5 V V V MHz s s 40 TYP MAX UNIT V V V A A A
conditions
Ic= 1000uA, IE=0 Ic= 10 mA, IE= 1mA, IB=0 IC=0
VCB= 700V , IE=0 VCE= 400V, VEB= 9 V,
B=0
IC=0
VCE= 5 V, IC= 0.5 A VCE= 5 V, IC= 1.5A IC=1000mA,IB= 250 mA IC=1000mA, IB= 250mA IE= 2000 mA VCE=10V,Ic=100mA f =1MHz IC=1A, IB1=-IB2=0.2A
VCC=100V
CLASSIFICATION OF
Rank Range 8-10
hFE (1)
10-15
15-20
20-25
25-30
30-35
35-40
Typical Characteristics
3DD13003
……
