器件名称: 3DD13002
功能描述: TO-251 Plastic-Encapsulate Transistors
文件大小: 51.18KB 共1页
简 介:MACROBIZES CO., LTD.
TO-251 Plastic-Encapsulate Transistors
3DD13002
FEATURES Power dissipation PCM:
TRANSISTOR (NPN)
TO-251
1.25
W (Tamb=25℃)
1. BASE 2. COLLECTOR 3. EMITTER
Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) fT tf ts
1
2
3
unless otherwise specified)
Test conditions MIN 600 400 6 100 100 9 5 0.8 1.1 5 0.5 2.5 V V MHz s s 40 TYP MAX UNIT V V V A A
Ic= 100A, IE=0 Ic=1mA, IB=0 IE= 100A, IC=0 VCB= 600V, IE=0 VEB= 6V, IC=0 VCE= 10V, IC= 200 mA VCE= 10V, IC=250 A IC=200mA, IB= 40 mA IC=200mA, IB= 40 mA VCE=10V, Ic=100mA f =1MHz IC=1A, IB1=-IB2=0.2A VCC=100V
CLASSIFICATION OF hFE(2)
Rank Range 9-15 15-20 20-25 25-30 30-35 35-40
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