器件名称: 3DD13002-TO-251
功能描述: TRANSISTOR
文件大小: 877.28KB 共3页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13002
TRANSISTOR（ NPN ）
TO— 251
FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（ Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE（1） DC current gain hFE（2） Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) fT tf ts
1.BASE 2.COLLECTOR 3.EMITTER
1
2
3
unless
Test
otherwise
specified）
TYP MAX UNIT V V V 100 100 9 5 0.8 1.1 5 0.5 2.5 V V MHz s s 40 A A
conditions
MIN 600 400 6
Ic= 100μA， IE=0 Ic= 1 mA， IB=0
IE= 100μA， IC=0 VCB= 600 VEB= 6 V， IE=0 V， IC=0
VCE= 10 V, IC= 200 m A VCE= 10 V, IC=250 A IC=200m A, IB= 40 m A IC=200mA, IB= 40 m A VCE=10V, f =1MHz IC=1A, I B1=-IB2=0.2A Ic=100mA
VCC=100V
CLASSIFICATION OF h FE(2)
Rank Range 9-15 15-20 20-25 25-30 30-35 35-40
TO-251 PACKAGE OUTLINE DIMENSIONS
D D1 C1
A
B
b1 b L e e1
E
A1
C
Symbol A A1 B b b1 c c1 D D1 E e e1 L
Dimensions In Millimeters Min 2.200 1.020 1.350 0.500 0.700 0.430 0.430 6.350 5.200 5.400 2.300TYP 4.500 7.500 4.700 7.900 Max 2.400 1.270 1.650 0.700 0.900 0.580 0.580 6.650 5.……
