器件名称: 3DD13002B
功能描述: Switch Mode NPN Transistors
文件大小: 90.83KB 共5页
简 介:3DD13002B
Switch Mode NPN Transistors
TO-92
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation T A =25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 400 600 6.0 1.0 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 600 Vdc, IE=0) Emitter Cutoff Current (VEB= 6.0Vd c, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 400 600 6.0 Max 100 100 Unit Vdc Vdc Vdc uAdc uAdc
WEITRON
3DD13002B
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min
WE IT R ON
Max Unit
On Characteristics
DC Current Gain (IC= 100 mAdc, VCE=10Vdc) (IC= 200 mAdc, VCE= 10Vdc) (IC= 10 mAdc, VCE= 10Vdc) Collector-Emitter Saturation Voltage (IC= 200 mAdc, IB= 40 mAdc) Base-Emitter Saturation Voltage (IC= 200 mAdc, IB= 40 mAdc) Current-Gain-Bandwidth Product (IC= 100 mAdc, VCE= 10 Vdc, f=1.0MHz) hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT 20 9 6
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25 40 . 0.8 1.1
-
Vdc Vdc
-
5.0
-
MHz
Switching Characteristics
Storage Time Fall Time
VCC =100V, IC =1A IB1=-I B2=200mA ts tf 2.5 0.5 us us
Classification of hFE(2)
Rank Range 9-15 15-20 20-25……
