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3DD13002

器件名称: 3DD13002
功能描述: TRANSISTOR
文件大小: 877.28KB    共3页
生产厂商: JIANGSU
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简  介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR( NPN ) TO— 251 FEATURES Power dissipation PCM : 1.25 W(Tamb=25℃) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J ,T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS( Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) fT tf ts 1.BASE 2.COLLECTOR 3.EMITTER      1 2 3 unless Test otherwise specified) TYP MAX UNIT V V V 100 100 9 5 0.8 1.1 5 0.5 2.5 V V MHz s s 40 A A conditions MIN 600 400 6 Ic= 100μA, IE=0 Ic= 1 mA, IB=0 IE= 100μA, IC=0 VCB= 600 VEB= 6 V, IE=0 V, IC=0 VCE= 10 V, IC= 200 m A VCE= 10 V, IC=250 A IC=200m A, IB= 40 m A IC=200mA, IB= 40 m A VCE=10V, f =1MHz IC=1A, I B1=-IB2=0.2A Ic=100mA VCC=100V CLASSIFICATION OF h FE(2) Rank Range 9-15 15-20 20-25 25-30 30-35 35-40 TO-251 PACKAGE OUTLINE DIMENSIONS D D1 C1 A B b1 b L e e1 E A1 C Symbol A A1 B b b1 c c1 D D1 E e e1 L Dimensions In Millimeters Min 2.200 1.020 1.350 0.500 0.700 0.430 0.430 6.350 5.200 5.400 2.300TYP 4.500 7.500 4.700 7.900 Max 2.400 1.270 1.650 0.700 0.900 0.580 0.580 6.650 5.……
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