器件名称: 2N5039
功能描述: NPN SILICON POWER TRANSISTORS
文件大小: 124.39KB 共4页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5038/D
NPN Silicon Transistors
. . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in industrial and commercial applications. High Speed — tf = 0.5 s (Max) High Current — IC(max) = 30 Amps Low Saturation — VCE(sat) = 2.5 V (Max) @ IC = 20 Amps
2N5038* 2N5039
*Motorola Preferred Device
20 AMPERE NPN SILICON POWER TRANSISTORS 75 and 90 VOLTS 140 WATTS
v v
CASE 1–07 TO–204AA (TO–3)
*MAXIMUM RATINGS
Rating
Symbol VCBO VCEV IC ICM IB VEBO
2N5038 150 150
2N5039 120 120
Unit Vdc Vdc Vdc Adc Adc
Collector–Base Voltage
Collector–Emitter Voltage Emitter–Base Voltage
7
Collector Current — Continuous Peak (1) Base Current — Continuous
20 30 5
Total Device Dissipation @ TC = 25_C Derate above 25_C
PD
140 0.8
Watts W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RθJC
Max
Unit
Thermal Resistance, Junction to Case
1.25
_C/W
* Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 10 ms, Duty Cycle
50%.
VCC + 30 V RC 2.5 +11 V 0 –9 V 1N4933 –5 V 10 PW = 20 s DUTY CYCLE = 1%
2N5038 IC = 12 AMPS IB1 = IB2 = 1.2 AMPS
2N5039 IC = 10 AMPS IB1 = IB2 = 1.0 AMPS
Figure 1. Switching Time Test Circuit
Preferred devices a……
