器件名称: 2N5039
功能描述: Silicon NPN Power Transistors
文件大小: 123.73KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5038 2N5039
DESCRIPTION ·With TO-3 package ·High speed ·Low collector saturation voltage APPLICATIONS ·They are especially intended for high current and fast switching applications
PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO PARAMETER
固
体 导 电半
2N5038
Collector-base voltage
VCEO VEBO IC ICM IB PD Tj Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature
INC
S G N HA
2N5039 2N5038 2N5039
Open emitter
N O C EMI
CONDITIONS
R O T DUC
VALUE 150 120 90 75 7 20 30 5
UNIT V
Open base
V V A A A W ℃ ℃
Open collector
TC=25℃
140 200 -65~200
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5038 2N5039
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1.0 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VCE=5V 1.8 2N5039 IC=10A ; VCE=5V VCE=70V; IB=0 20 VCE=55V; IB=0 VCE=140V; VBE=-1.5V VCE=100V; VBE=-1.5V ;TC=150℃ VCE=110V; VBE=-1.5V VCE=85V; VBE=-1.5V TC=150℃ VEB=5V; IC=0 mA V 2.5 3.3 V V V 75 CONDITIONS MIN 90 V TYP MAX UNIT
VCEO(SUS)
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