器件名称: 2N5039
功能描述: Silicon NPN Power Transistors
文件大小: 114.05KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5038 2N5039
DESCRIPTION With TO-3 package High speed Low collector saturation voltage APPLICATIONS They are especially intended for high current and fast switching applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO PARAMETER Collector-base voltage 2N5038 2N5039 2N5038 2N5039 CONDITIONS Open emitter VALUE 150 120 90 75 7 20 30 5 TC=25 140 200 -65~200 UNIT V
VCEO VEBO IC ICM IB PD Tj Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature
Open base Open collector
V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5038 2N5039
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1.0 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VCE=5V 1.8 2N5039 2N5038 ICEO Collector cut-off current 2N5039 2N5038 ICEX Collector cut-off current 2N5039 2N5038 IEBO Emitter cut-off current 2N5039 hFE-1 DC current gain 2N5038 hFE-2 DC current gain 2N5039 Is/b Second breakdown collector current IC=10A ; VCE=5V VCE=28V, VCE=45V(t=1.0s Nonrepetitive) 5 0.9 A I……
