器件名称: 2N5039
功能描述: NPN HIGH POWER SILICON TRANSISTOR
文件大小: 55.42KB 共2页
简 介:TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT Top, Tstg
2N5038
90 150
2N5039
75 125
Units
Vdc Vdc Vdc Adc Adc W
0
7.0 5.0 20 140 -65 to +200 Max. 1.25
C
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C for TC > +250C Unit 0 C/W
TO-3* (TO-204AA)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc Emitter-Base Breakdown Voltage IE = 25 mAdc Collector-Base Cutoff Current VCE = 150 Vdc VCE = 125 Vdc Collector-Base Cutoff Current VCE = 70 Vdc VCE = 55 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 V(BR)CEO V(BR)EBO 2N5038 2N5039 2N5038 2N5039 ICBO 90 75 7.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 Vdc Vdc Adc
ICEO IEBO
Adc Adc Adc
2N5038 2N5039
ICEX
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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2N5038, 2N5039, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Sym……
