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2SA1020

器件名称: 2SA1020
功能描述: One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
文件大小: 52.77KB    共4页
生产厂商: ONSEMI
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简　　介:2SA1020 Preferred Device One Watt High Current PNP Transistor Features PbFree Packages are Available* MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value 50 50 5.0 2.0 900 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C W mW/°C °C http://onsemi.com VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS COLLECTOR 2 3 BASE 1 EMITTER PNP THERMAL CHARACTERISTICS Characteristic Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase Symbol RqJA RqJC Max 125 83.3 Unit °C/W °C/W 1 2 3 TO92 (TO226) CASE 2910 STYLE 14 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 2SA 1020 AYWW G G A = Assembly Location Y = Year WW = Work Week G = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and ……
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2SA1020L-Y-AB3-R SILICON PNP EPITAXIAL TRANSISTOR UTC
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2SA1020L-Y-AB3-B SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020L-X-T9N-K SILICON PNP EPITAXIAL TRANSISTOR UTC
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