器件名称: 2SA1020
功能描述: PNP EPITAXIAL SILICON TRANSISTOR
文件大小: 170.99KB 共4页
简 介:UTC 2SA1020
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power switching applications.
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FEATURES
*Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0s(Typ.) *Complement to UTC 2SC2655
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE
-50 -50 -5 -2 0.5 1 150 -55 ~ +150
UNIT
V V V A W W °C °C
Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Ic Collector Power Dissipation PC Collector Power Dissipation PC* Junction Temperature Tj Storage Temperature TSTG * : Mounted on cermic substrate( 250mm2 × 0.8t )
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector cut-off current Emitter cut-off current Collector to emitter breakdown voltage DC Current Gain Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Switching time Turn-on time Storage time Fall time
SYMBOL
ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf
TEST CONDITIONS
VCB=-50V, IE=0 VEB=-5V, IC=0 Ic=-10mA, IB=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A Ic=-1A, IB=-0.05A Ic=-1A, IB=-0.05A VCE=-2V, Ic=-0.5A VCB=-10V, IE=0, f=1MHz
MIN
TYP
MAX
-1.0 -1.0
UNIT
A A V
-50 70 40 240 -0.5 -1.2 100 40 0.1 1.0 0.1
V V MHz pF s s s
UTC
UNISONIC TECHNOLOGIES
CO. LTD
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QW-R208……