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2SA1020

器件名称: 2SA1020
功能描述: TO-92MOD Plastic-Encapsulated Transistors
文件大小: 61.7KB    共1页
生产厂商: ETC
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简  介:Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-100A, IE=0 Ic=-1mA, IB=0 IE=-100 A, IC=0 VCB=-50 V, IE=0 VEB=-5 V, IC=0 VCE=-2 V, IC=-500 A IC=-1A, IB=-50 mA IC=-1 A, IB=-50 mA VCE=-2 V, IC=-500 mA -50 -50 -5 -1 -1 70 240 -0.5 -1.2 100 A A V V MHz fT CLASSIFICATION OF hFE(1) Rank Range O 70-140 Y 120-240 ……
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2SA1020-O-T9N-R SILICON PNP EPITAXIAL TRANSISTOR UTC
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2SA1020L-Y-T9N-B SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020L-Y-AB3-R SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020L-Y-AB3-K SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020L-Y-AB3-B SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020L-X-T9N-K SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020L-X-T9N-B SILICON PNP EPITAXIAL TRANSISTOR UTC
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2SA1020L-O-T9N-R SILICON PNP EPITAXIAL TRANSISTOR UTC
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2SA1020L-O-T9N-B SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020L-O-AB3-R SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020L-O-AB3-K SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020L-O-AB3-B SILICON PNP EPITAXIAL TRANSISTOR UTC
2SA1020G One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS ONSEMI
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2SA1020_05 SILICON PNP EPITAXIAL TRANSISTOR UTC
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