器件名称: 2SA1020
功能描述: PNP Transistor Plastic-Encapsulate Transistors
文件大小: 168.61KB 共3页
简 介:2SA1020
PNP Transistor
Elektronische Bauelemente
RoHS Compliant Product
Plastic-Encapsulate Transistors
A suffix of "-C" specifies halogen & lead-free
T O-92 MOD
6.0±0.2
4.9 ±0.2
FEATURE Power Amplifier Applications
1.0±0.1
Symbol VCBO VCEO VEBO
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature
Value -50 -50 -5 -2 900 -55~+150
Units V V V A mW
O
14 ±0. 2
1 0. 50 +0. –0.1 1 0.45 +0. –0.1
MAXIMUM RATINGS
Ta=25 C unless otherwise noted
o
IC
PD TJ,Tstg
(1. 50 Typ. ) 1. 9 +0.1 –0.1 1 2 3 3.0 ±0.1
2.0 +0.3 –0.2
8.6±0.2
C
1: Emitter 2: Collector 3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Satruation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance
o
Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO VCE(sat) VBE(sat) hFE1 fT Cob
Min -50 -50 -5 70 -
Typ. 100 40
Max -
Unit V V V uA uA
V V
Test Conditions I C=-100A,IE=0 I C=-1mA,IB=0 I E=-100 A,IC=0 VCB=-50V,IE=0 VBE=-5 V,IC=0 I C=- 1A,IB=-50mA I C=- 1 A,IB=- 50mA VCE=-2 V, I C=- 500A VCE=-2 V, IC=- 500mA VCB=-10 V , f=1MHz
-1 -1
-0.5 -1.2 240 -
MH z pF
Classification of hFE1
Rank Range O 70~140 Y 120~240
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
An……
