器件名称: MBT3904DW
功能描述: Dual General Purpose Transistor NPN+NPN Silicon
文件大小: 244.3KB 共7页
简 介:MBT3904DW
Dual General Purpose Transistor NPN+NPN Silicon
3 2 1
6 5
4
1
2
3
4
5
6
SOT-363(SC-88)
NPN+NPN
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R θ JA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W C
Device Marking
MBT3904DW=MA
Electrical Characteristics Off C har acter istics
(TA=25 C Unless Otherwise noted) Symbol Min Max Unit
Characteristics
Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=10 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0) Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc) Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint. 2. Pulse Test:Pulse Width< =300uS, Duty Cycle< =2.0%
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX
40 60 6.0
50 50
Vdc Vdc Vdc nAdc nAdc
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WEITRON
MBT3904DW
Electrical Characteristics ( TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
On Characteristics (2)
DC Current Gain (IC= 0.1 mAdc, VCE=1.0Vdc) (IC= 1.0 mAdc, VCE= 1.0 Vdc) (IC= 10 mAdc, VCE= 1.0Vdc) (IC= 50 mAdc, VCE= 1.0Vdc) (IC= 100 mAdc, VCE= 1.0Vdc) Collector-Emitter Saturation Voltage ……
