器件名称: MBT3904DW2T1
功能描述: Dual General Purpose Transistors
文件大小: 105.62KB 共7页
简 介:MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors
The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.
Features
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http://onsemi.com MARKING DIAGRAM
6 SOT-363/SC-88/ SC70-6 CASE 419B 1 XX MG G
hFE, 100-300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7-inch/3,000 Unit Tape and Reel Pb-Free Packages are Available
MAXIMUM RATINGS
Rating Collectorā-āEmitter Voltage Collectorā-āBase Voltage Emitterā-āBase Voltage Collector Current - Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc
XX = MA for MBT3904DW1T1 MJ for MBT3904DW2T1 M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) (3) (2) (1)
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(5) MBT3904DW1T1 STYLE 1 (3) (2)
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HBM Class 2 MM Class B
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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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THERAML CHARACTERISTICS
Characteristic Total Packag……
