器件名称: MBT3904DW2T1G
功能描述: Dual General Purpose Transistors
文件大小: 105.7KB 共8页
简 介:MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors
The MBT3904DW1T1 and MBT3904DW2T1 devices are a spinoff of our popular SOT23/SOT323 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT363 sixleaded surface mount package. By putting two discrete devices in one package, this device is ideal for lowpower surface mount applications where board space is at a premium.
Features http://onsemi.com MARKING DIAGRAM
6 6 1 SOT363/SC88/ SC706 CASE 419B 1 XX = MA for MBT3904DW1T1 MJ for MBT3904DW2T1 d = Date Code (3) (2) (1) XXd
hFE, 100300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7inch/3,000 Unit Tape and Reel PbFree Packages are Available
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value 40 60 6.0 200 HBM>16000, MM>2000 Unit Vdc Vdc Vdc mAdc V (3) (2) (1) (4) (5) MBT3904DW1T1 STYLE 1 (6) Q1 Q2
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
Q1
Q2
THERAML CHARACTERISTICS
Characteristic Total Package Dissipation (Note 1) TA = 25°C Ther……
