器件名称: MBT3904DW1T1
功能描述: Dual General Purpose Transistors
文件大小: 422.11KB 共10页
简 介:LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, these devices are ideal for low–power surface mount applications where board space is at a premium. h FE, 100–300 Low VCE(sat) , 3 0.4 V Simplifies Circuit Design Reduces Board Space See Table Reduces Component Count Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
6 5 4
1 2 3
SOT–363/SC–88 CASE 419B STYLE 1
6 5 4
6
5
4
6
5
4
Q2
Q1
Q2
Q1
Q2
Q1
1 1 2 3 1 2 3
2
3
MBT3946DW1T1
*Q 1 same as MBT3906DW1T1 Q 2 same as MBT3904DW1T1
MBT3904DW1T1 MAXIMUM RATINGS
Rating Collector–Emitter Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector–Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Emitter–Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector Current -Continuous MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Electrostatic Discharge Symbol V CEO
MBT3906DW1T1
Voltage
Unit V
40 –40 V CBO 60 –40 V
EBO
V
V 6.0 –5.0
IC 200 –200 HBM>16000, MM>2000
mAdc
ESD
V
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 150 Unit mW
ORDERING INFORMATION
Devic……
