器件名称: BAT60B
功能描述: Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
文件大小: 25KB 共3页
简 介:BAT 60B
Silicon Schottky Diode Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply For clamping and proptection in low voltage application For detection and step-up-conversion
2
1
VPS05176
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 60B Marking blue/5 Ordering Code Q62702-A1189 Pin Configuration 1=C 2=A Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t < 100s) Total power dissipation, T S = 28 °C Junction temperature Storage temperature Maximum Ratings Junction - ambient
1)
Symbol
Value 10 3 5 1350 150 - 55 ...+150
Unit V A mA mW °C
VR IF IFSM Ptot Tj Tstg
RthJA RthJS
≤ 160 ≤ 90
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-04-1998 1998-11-01
BAT 60B
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. A 5 10 100 410 0.24 0.3 0.4 V Unit
IR
VR = 5 V VR = 8 V
Reverse current
IR
-
VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C
Forward voltage
VF
I F = 10 mA I F = 100 mA I F = 1000 mA
AC characteristics Diode capacitance
CT
-
20
-
pF
VR = 5 V, f = 1 MHz
Semiconductor Group Semiconductor Group
22
Sep-04-1998 1998-11-01
BAT 60B
Forward current IF = f (TA*;TS) * Package mounted on epoxy
Reverse current IR = f (TA)
VR = 8V
10 0……
