器件名称: BAT60B
功能描述: Silicon Schottky Diode
文件大小: 419.98KB 共4页
简 介:BAT60B...
Silicon Schottky Diode High current rectifier Schottky diode with very low VF drop (typ. 0.24 V at IF = 10mA) For power supply applications For clamping and protection in low voltage applications For detection and step-up-conversion
BAT60B
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ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAT60B
Parameter
Package SOD323
Configuration single
Symbol VR IF I FSM Ptot Tj T op T stg Symbol RthJS Value
Marking white/5
Unit
Maximum Ratings at TA = 25°C, unless otherwise specified
Diode reverse voltage1) Forward current Non-repetitive peak surge forward current (t ≤ 10ms) Total power dissipation
TS ≤ 28°C
10 3 5 1350 150 -55 ... 125 -55 ... 150
Value ≤ 90
V A
mW °C
Junction temperature Operating temperature range Storage temperature
Thermal Resistance Parameter
Unit
Junction - soldering point2)
1For 2For
K/W
TA > 25 °C the derating of VR has to be considered. Please refer to curve Permissible reverse voltage. calculation of RthJA please refer to Application Note Thermal Resistance
1
Jun-15-2004
BAT60B...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current1) IR VR = 5 V VR = 8 V VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C
Unit
A
VF
5 10 100 410 0.24 0.32 0.4 0.48
15 25 800 1500 V 0.3 0.38 0.5 0.6
Forward voltage1)
IF = 10 mA IF = 100 mA IF = 500 mA IF = 1000 mA
0.2 0.26 0.32 0.36
AC Characteristics Diode capacitance VR =……
