器件名称: BAT60B_07
功能描述: Silicon Schottky Diode
文件大小: 63.41KB 共6页
简 介:BAT60B...
Silicon Schottky Diode High current rectifier Schottky diode with very low VF drop (typ. 0.24 V at IF = 10mA) For power supply applications For clamping and protection in low voltage applications For detection and step-up-conversion Pb-free (RoHS compliant) package 1) Qualified according AEC Q101
BAT60B
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BAT60B
Parameter Diode reverse voltage2) Forward current
Package SOD323
Configuration single
Symbol VR IF I FSM Ptot Tj T op T stg Value 10 3 5 1350 150 -55 ... 125 -55 ... 150
Marking white/5
Unit V A
Maximum Ratings at TA = 25°C, unless otherwise specified
Non-repetitive peak surge forward current (t ≤ 10ms) Total power dissipation TS ≤ 28°C Junction temperature Operating temperature range Storage temperature
1Pb-containing 2For
mW °C
package may be available upon special request TA > 25 °C the derating of VR has to be considered. Please refer to curve Permissible reverse voltage.
1
2007-04-19
BAT60B...
Thermal Resistance Parameter Junction - soldering point 1)
Symbol RthJS
Value ≤ 90
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 8 V VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C Forward voltage2) IF = 10 mA IF = 100 mA IF = 500 mA IF = 1000 mA VF 0.2 0.26 0.32 0.36 0.24 0.32 0.4 0.48 0.3 0.38 0.5 0.6 5 10 100 410 15 25 800 1500
Unit
A
V
……
