器件名称: RB411D
功能描述: Schottky Barrier Diode
文件大小: 468.65KB 共4页
简 介:RB411D
Schottky Barrier Diode
VOLTAGE 40Volts POWER 500mA
FEATURES
High Reliability Low Reverse Current Ultra High-speed Switching
MECHANICAL DATA
Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-202G, Method 208 Approx. Weight : 0.08 gram Marking : 11D
ABSOLUTE RATINGS (TA=25
Parameter Reverse Voltage Average Rectified Forward Current Forward Current Surge Peak (t=8.3ms) Junction Temperature Storage Temperature
)
Symbol VRM IO IFSM TJ TSTG Value 40 500 3 125 -40 to +125 Units V mA A
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RB411D
ELECTRICAL CHARACTERISTICS (TA=25
Parameter Symbol Min. Forward Voltage VF Reverse Current Junction Capacitance IR CJ 16 0.3 30 V uA pF IF= 10mA VR= 10V VR= 10V, f=1MHz Typ. Max. 0.5
)
Units V Conditions IF= 500mA
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RB411D
ELECTRICAL CHARACTERISTICS CURVE
Fig. 1. Typical Forward Voltage
Fig. 2. Typical Reverse Current
Fig. 3. Typical Operating Temperature Derating
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RB411D
MOUNTING PAD LAYOUT
LEGAL STATEMENT
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