器件名称: RB411D
功能描述: Schottky barrier diode
文件大小: 208.05KB 共4页
简 介:RB411D
Diodes
Schottky barrier diode
RB411D
zApplications Low current rectification zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
1.9
zFeatures 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
－0.05
(3)
2.8±0.2
1.6－0.1
＋0.2
1.0MIN.
0.15－0.06
＋0.1
0.95
0.8MIN.
0～0.1 0.3～0.6
SMD3
(2)
(1) 0.95 1.9±0.2
0.8±0.1 1.1±0.2 0.01
zConstruction Silicon epitaxial planar
0.95
zStructure
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code
zTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05 φ1.5±0.1 0 1.75±0.1 0.3±0.1
3.5±0.05
8.0±0.2
3.2±0.1
3.2±0.1
4.0±0.1
φ1.05MIN
0～0.5
5.5±0.2
3.2±0.1 1.35±0.1
zAbsolute maximum ratings (Ta = 25°C)
Param eter R evers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current（ *1 ） Forward current s urge peak （ 60Hz· 1cyc ）（ *1 ） J unction tem perature S torage tem perature (*1) Rating of per diode Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 20 500 3 125 -40 to +125 Unit V V mA A ℃ ℃
zElectrical characteristics (Ta = 25°C)
Param eter Forwarad voltage Revers e current Capacitance between term inal Sym bol VF 1 VF 2 IR 1 Ct1 Min. Typ. 20 Max. 0.50 0.30 30 Unit V V A pF IF =500m A IF =10m A VR =10V VR =10V , f=1MHz Conditions
Rev.B
2.4
0.4 ＋0.1
2.9±0.2 各リードとも Each lead has same dimension 同寸法
1/3
RB411D
Diodes
zElectrical characteristic curves (Ta = 25°C)
1000 Ta=25℃ Ta=75℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 ……
