器件名称: RB411D
功能描述: Schottky barrier diode
文件大小: 55.23KB 共2页
简 介:RB411D
Diodes
Schottky barrier diode
RB411D
!Applications Low power rectification For switching power supply !External dimensions (Units : mm)
2.9±0.2 1.9±0.2 0.95 0.95
0.2 1.1 + 0.1
0.8±0.1
(All leads have the same dimensions)
!Construction Silicon epitaxial planar
ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346
!Circuit
!Absolute maximum ratings (Ta = 25°C)
Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature
60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 20 0.5 3 125 40~+125
Unit V V A A
°C °C
!Electrical characteristics (Ta = 25°C)
Parameter Forward voltage Forward voltage Reverse current Capacitance between terminals
Note) sensitive product handling required.
Symbol VF1 VF2 IR CT
Min.
Typ. 20
Max. 0.3 0.5 30
Unit V V A pF IF=10mA IF=500mA VR=10V
Conditions
VR=10V, f=1MHz
0.3~0.6
D3E
!Features 1) Small surface mounting type. (SMD3) 2) Low VF. (VF=0.43V Typ. at 0.5A) 3) High reliability.
0.2 1.6 + 0.1
2.8±0.2
0~0.1
+0.1 0.4 0.05
+0.1 0.15 0.06
RB411D
Diodes
!Electrical characteristic curves (Ta = 25°C)
Ta=125°C
100m
Ta =12 Ta= 5°C 75 ° C Ta =2 Ta = 2 5 ° C 5°C
1m
Ta=75°C
CAPACITANCE BETWEEN TERMINALS : CT (pF)
1
10m
1 000
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
100
10m
Typ. pulse measurement
100
1m
10
Ta=25°C
10
100
1
Typ. pulse measurement
10 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1 0
5
10
15
20
25
30
35
1 ……
