器件名称: 2N3772
功能描述: NPN SILICON PLANAR POWER TRANSISTOR
文件大小: 69.63KB 共3页
简 介:Transys
Electronics
L I M I T E D
NPN SILICON PLANAR POWER TRANSISTOR
2N3772 TO-3 Metal Can Package
Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Power Dissipation @ Tc=25C Derate Above 25C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 0.170 C/W
SYMBOL VCBO VCEO VCEX VEBO IC IB PD Tj, Tstg
VALUE 100 60 80 7 20 30 5 15 150 0.855 - 65 to +200
UNITS V V V V A A W W/C C
ELECTRICAL CHARACTERISTICS (TC=25C unless specified otherwise) DESCRIPTION Collector Emitter Sustaing Voltage Collector Emitter Sustaing Voltage Collector Emitter Sustaing Voltage Collector Cut Off Current Collector Cut Off Current SYMBOL VCEO (sus)* VCEX (sus) VCER (sus) ICEO ICEV TEST CONDITION IC=0.2A, IB=0 IC=0.2A, RBE=100,VEB=(off)=1.5V IC=0.2A, RBE=100, VCE=50V, IB=0 VCE=100V, VEB(off)=1.5V Tc=150C VCE=45V, VEB(off)=1.5V VCB=100V, IE=0 VBE=7V, IC=0 IC=10A, VCE=4V IC=20A, VCE=4V IC=10A, IB=1A IC=20A, IB=4A IC=10A, VCE=4V MIN 60 80 70 MAX UNITS V V V mA mA
10 5.0
Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage
ICBO IEBO hFE* VCE(sat) VBE(on)
15 5
10 5.0 5.0 60 1.4 4.0 2.2
mA mA
V V
NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 M……
