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2N3772

器件名称: 2N3772
功能描述: isc Silicon NPN Power Transistor
文件大小: 169.74KB    共2页
生产厂商: ISC
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简  介:INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION Excellent Safe Operating Area High DC Current Gain-hFE=15(Min)@IC = 10A Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEX VCEO VEBO IC ICM IB IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak VALUE 100 80 60 UNIT V 2N3772 Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature w ww s c s .i 7 20 30 5 15 150 200 -65~200 n c . i m e V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS) VCER(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage CONDITIONS IC= 200mA ; IB= 0 IC= 200mA ; VBE(off)= 1.5V; RBE=100Ω IC= 200mA ; RBE= 100Ω IC= 10A; IB= 1A IC= 20A; IB= 4A IC= 10A ; VCE= 4V MIN 60 80 70 2N3772 MAX UNIT V V V VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT Collector-Emitte……
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