器件名称: 2N3772
功能描述: SILICON NPN TRANSISTOR
文件大小: 55.62KB 共2页
简 介:UTC 2N3772
SILICON NPN TRANSISTORS
The UTC 2N3772 is a power-base power transistor in
SILICON NPN TRANSISTOR
TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications.
TO-3
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current(1) Base Current Base Peak Current(1) Total Dissipation at Ta=25°C Storage Temperature Max. Operating Junction Temperature
SYMBOL
VCBO VCEO VEBO VCEV Ic ICM IB IBM Ptot TSTG Tj
VALUE
100 60 7 80 30 30 5 15 150 -65 ~ +200 200
UNITS
V V V V A A A A W °C °C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current
SYMBOL
VCEX(sus) VCER(sus) VCEO(sus) ICEO ICEX
TEST CONDITIONS
Ic=0.2 A, VBE(OFF)=1.5V, RBE=100 Ohms Ic=0.2 A, RBE=100 Ohms Ic=0.2 A, IB=0 VCE=50V,IB=0 VCE=100V,VBE(off)=1.5V. VCE=30V,VBE(off)=1.5V, Ta=150°C VCE=50V,IE=0 VBE=7V,IC=0 Ic=10A,VCE=4V, Ic=20A,VCE=4V
MIN
80 70 40
TYP
MAX
UNIT
V V V mA mA
10 5 10 5 5 15 5 60
Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS DC Current Gain(note)
ICBO IEBO hFE
mA mA
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R205-002,A
UTC 2N3772
PARAMETER
Collector-Emitter S……
