器件名称: 2N3741
功能描述: Medium Power PNP Transistors
文件大小: 62.34KB 共3页
简 介:7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
APPLICATIONS:
2N3741
Drivers Switches Medium-Power Amplifiers
FEATURES:
Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Complementary to NPN 2N3767 (2N3741)
Medium Power PNP Transistors
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.
TO-66
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
VCEO* VEB* VCB* IC* IC* IB* TSTG* TJ* PD*
θ *
CHARACTERISTIC
Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation TC = 25° C Derate above 25° C Thermal Impedance
VALUE
80 7.0 80 10 4.0 2.0 -65 to 200 -65 t……
