器件名称: 2N3741
功能描述: isc Silicon PNP Power Transistors
文件大小: 184.32KB 共2页
简 介:Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N3740 2N3741
DESCRIPTION ·With TO-66 package ·Excellent safe area limits ·Low collector saturation voltage APPLICATIONS ·Suitable for use in as drivers,switches and medium-power amplifier and applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO
固
Collector-base voltage
体 导 半 电
PARAMETER
VCEO VEBO IC ICM IB PT Tj Tstg
INCH
Base current
Collector-emitter voltage
M E S E ANG
2N3741 2N3740 2N3741
2N3740
Open emitter
D N O IC
CONDITIONS
R O T C U
VALUE -60 -80 -60 -80 -7 -4 -10 -2
UNIT V
Open base
V V A A mA W ℃ ℃
Emitter-base voltage
Open collector
Collector current Collector current-Peak
Total power dissipation Junction temperature Storage temperature
TC=25℃
25 150 -65~200
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 7.0 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N3740 IC=-100mA ; IB=0 2N3741 VCEsat VBE Collector-emitter saturation voltage Base -emitter on voltage 2N3740 2N3741 2N3740 2N3741 IC=-1A ;IB=-125mA IC=-0.25A ; VCE=-1V VCE=-60V;VBE(off)=-1.5V VCE=-40V;VBE(off)=-1.5V;TC=150℃ VCE=80V;VBE(off)=1.5V VCE=60V;VBE(off)=1.5V;TC=150℃ VCE=-40V; IB=0 CONDITIONS
2N3740 2N3741
MIN -60
TYP.
MAX
UNIT
V(BR)……
