器件名称: 2N3741
功能描述: Silicon PNP Power Transistors
文件大小: 115.76KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N3740 2N3741
DESCRIPTION
With TO-66 package Excellent safe area limits Low collector saturation voltage
APPLICATIONS
Suitable for use in as drivers,switches and medium-power amplifier and applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N3740 2N3741 Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 2N3740 2N3741 Open collector Open base CONDITIONS Open emitter VALUE -60 -80 -60 -80 -7 -4 -10 -2 25 150 -65~200 V A A mA W V UNIT V
VCEO VEBO IC ICM IB PT Tj Tstg
THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance from junction to case MAX 7.0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N3740 IC=-100mA ; IB=0 2N3741 IC=-1A ;IB=-125mA IC=-0.25A ; VCE=-1V 2N3740 2N3741 2N3740 2N3741 2N3740 2N3741 VCE=-60V;VBE(off)=-1.5V VCE=-40V;VBE(off)=-1.5V;TC=150 VCE=80V;VBE(off)=1.5V VCE=60V;VBE(off)=1.5V;TC=150 VCE=-40V; IB=0 CONDITIONS
2N3740 2N3741
SYMBOL
MIN -60
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V -80 -0.6 -1.0 -0.1 -1.0 -0.1 -1.0 V V
VCE(sat) VBE(on)
Collector-emitter saturation vol……
