器件名称: 2SD1115
功能描述: Silicon NPN Darlington Power Transistor
文件大小: 238.46KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1115
DESCRIPTION Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) High DC Current Gain : hFE= 500(Min)@IC= 2A
APPLICATIONS Designed for high voltage switching, igniter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
s c s i . w
VALUE 400 V 300 V 7 V 3 A 6 A 40 W
UNIT
n c . i m e
IC
Collector Current-Continuous
ICP
Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature
PC
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 2A; L= 10mH, PW= 50μs; f= 50Hz IC= 0.1mA; IE= 0 MIN TYP.
2SD1115
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
300
V
V(BR)CBO
Collector-Base Breakdown Voltage
400
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 20mA
B
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 20mA
B
2.0
V
ICEO
Collector Cutoff Current
VCE= 300V; RBE= ∞
hFE
DC Current Gain
Switching times
ton
Turn-on Time
toff
Turn-Off Time
w w
s c s i . w
IC= 2A; VCE= 2V
n c . i m e
500 1.0 22
100
……
