器件名称: 2SD1115K
功能描述: Silicon NPN Power Transistors
文件大小: 57.56KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1115K
DESCRIPTION With TO-220 package DARLINGTON APPLICATIONS For high voltage switching and ignitor applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 400 300 7 3 6 40 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCBO VEBO VCEsat VBEsat ICEO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain CONDITIONS IC=2A ; PW=50μs f=50Hz, L=10mH IC=0.1A ,IE=0 IE=50mA ;IC=0 IC=2A; IB=20mA IC=2A; IB=20mA VCE=300V; RBE=∞ IC=2A ; VCE=2V 500 MIN 300 400 7
2SD1115K
TYP.
MAX
UNIT V V V
1.5 2.0 0.1
V V mA
Switching times ton toff Turn-on time IC=2A;IB1=- IB2=20mA Turn-off time 22 μs 1.0 μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1115K
Fig.2 Outline dimensions(unindicated tolerance:±0.10……
