器件名称: 2SD1115K
功能描述: Silicon NPN Triple Diffused
文件大小: 32.91KB 共4页
简 介:2SD1527
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Rating 1000 1000 5 0.5 1.8 25 150 –55 to +150
Unit V V V A W W °C °C
2SD1527
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 1000 5 — 10 10 — — — — Typ — — — — — — — 5 5 Max — — 10 — — 1.2 5 — — V V MHz pF Unit V V A Test conditions I C = 1 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 800 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 100 mA VCE = 5 V, IC = 100 mA I C = 300 mA, IB = 60 mA VCE = 20 V, IC = 50 mA VCB = 100 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1 hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE (sat) fT Cob
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 1.0
Area of Safe Operation TC = 25°C
(50 V, 0.5 A) Collector current IC (A)
P
C
20
=
25
W
0.1 DC Operation (600 V, 0.042 A)
10
(1,000 V, 0.015 A) 0 50 100 Case temperature TC (°C) 150 0.01 30 100 300 1,000 3,000 Collector to emitter voltage VCE……
