器件名称: 2SC1213
功能描述: TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 215.2KB 共1页
简 介:DC COMPONENTS CO., LTD.
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2SC1213
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
TO-92
Pinning
1 = Emitter 2 = Collector 3 = Base
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 50 50 4 500 400 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
3 2 1
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min 50 50 4 60 35 100 2%
Typ 160
Max 0.5 0.5 0.6 1.2 320 -
Unit V V V A A V V MHz
Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=20V, IE=0 VEB=5V, IC=0 IC=150mA, IB=15mA IC=150mA, IB=15mA IC=10mA, VCE=3V IC=500mA, VCE=3V IC=20mA, VCE=6V
VCE(……
