器件名称: 2SC1213ACTZ-E
功能描述: Silicon NPN Epitaxial
文件大小: 154.36KB 共5页
简 介:2SC1213, 2SC1213A
Silicon NPN Epitaxial
REJ03G0684-0200 (Previous ADE-208-1048) Rev.2.00 Aug.10.2005
Application
Low frequency amplifier Complementary pair with 2SA673 and 2SA673A
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC1213 35 35 4 500 400 150 –55 to +150 2SC1213A 50 50 4 500 400 150 –55 to +150 Unit V V V mA mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 4
2SC1213, 2SC1213A
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE*1 hFE 2SC1213 Min Typ Max 35 — — 35 4 — 60 10 — — — — — — — 0.5 320 — 2SC1213A Min Typ Max 50 — — 50 4 — 60 10 — — — — — — — 0.5 320 — 0.6 — Unit V V V A Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC =10 mA VCE = 3 V, 2 IC = 500 mA* V V IC = 150 mA, 2 IB = 15 mA* VCE = 3 V, IC = 10 mA
— 0.2 0.6 — 0.2 VCE(sat) Collector to emitter saturation voltage Base to emitter voltage VBE — 0.64 — — 0.64 Notes: 1. The 2SC1213 and 2SC1213A are grouped by hFE as follows. 2. Pulse test B C D 60 to 120 100 to……
