器件名称: 2SC1213
功能描述: NPN Silicon General Purpose Transistor
文件大小: 77.04KB 共2页
简 介:2SC1213 & 2SC1213A
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
NPN Silicon
General Purpose Transistor
FEATURE
Low frequency amplifier
TO-92
Power dissipation
PCM: 0.4 W (Tamb=25℃)
2
3
Collector current
ICM: 0.5 A 35 50 V V
1
1
2
3
Collector-base voltage V(BR)CBO: 2SC1213 : 2SC1213A : -55℃ to +150℃
1. Emitter 2. Collector 3. Base
Operating and storage junction temperature range
TJ, Tstg:
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage 2SC1213 2SC1213A Collector-emitter breakdown voltage 2SC1213 2SC1213A Emitter-base breakdown voltage Collector cut-off current Symbol V(BR)CBO Test conditions MIN 35 50 35 50 4 0.5 60 10 0.2 0.6 0.75 V V 320 TYP MAX UNIT V
Ic= 10A , IE=0
V(BR)CEO V(BR)EBO ICBO hFE(1)
IC= 1 mA , IB=0 IE=10A, IC=0 VCB= 20V , IE=0 VCE=3V, IC= 10mA VCE=3V, IC= 500mA IC= 150mA, IB= 15 mA VCE= 3V, IC= 10 mA
V V A
DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE
CLASSIFICATION OF hFE(1)
Rank Range B 60-120 C 100-200 D 160-320
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
2SC1213 & 2SC1213A
Elektronische Bauelemente PNP Silicon
General Purpose Transistor
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA)
100
Typical Output Characteristics (1) 1.0 0.9 0.8
80
0.7 0.6 ……
