器件名称: 2N4921
功能描述: Silicon NPN Power Transistors
文件大小: 123.16KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4921 2N4922 2N4923
DESCRIPTION ·With TO-126 package ·Complement to type 2N4918/4919/4920 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
·
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER
体 导 半 固电 N A H C IN
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature
VCBO
IC M E S GE
2N4921 2N4922 Open emitter 2N4923 2N4921 2N4922 2N4923 Open base Open collector
CONDITIONS
O
R O T C NDU
VALUE 40 60 80 40 60 80 5 1 3 1
UNIT
V
VCEO
V
VEBO IC ICM IB PD Tj Tstg
V A A A W ℃ ℃
TC=25℃
30 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.16 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N4921 VCEO(SUS) Collector-emitter sustaining voltage 2N4922 2N4923 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4921 ICEO Collector cut-off current 2N4922 2N4923 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB IC=1.0A ;IB=0.1A IC=1.0A ;IB=0.1A IC=1A ; VCE=1V VCE=20V; IB=0 VCE=30V; IB=0 VCE=4……
