器件名称: 2N4921_06
功能描述: Medium−Power Plastic NPN Silicon Transistors
文件大小: 90.97KB 共6页
简 介:2N4921, 2N4922, 2N4923
2N4923 is a Preferred Device
MediumPower Plastic NPN Silicon Transistors
These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications.
Features http://onsemi.com
Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation Due to Thermopad Construction
PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 A Complement to PNP 2N4918, 2N4919, 2N4920 PbFree Packages are Available*
1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 4080 VOLTS, 30 WATTS
Rating Symbol VCEO Value 40 60 80 40 60 80 Unit Vdc CollectorEmitter Voltage 2N4921 2N4922 2N4923 2N4921 2N4922 2N4923 CollectorEmitter Voltage VCB Vdc Emitter Base Voltage VEB IC IB 5.0 1.0 3.0 1.0 Vdc Adc Adc Collector Current Continuous (Note 1) Base Current Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 30 0.24 W mW/_C _C TJ, Tstg –65 to +150
MAXIMUM RATINGS
TO225 CASE 77 STYLE 1 3 2 1
MARKING DIAGRAM
1 YWW 2 N492xG
THERMAL CHARACTERISTICS (Note 2)
Characteristic Thermal Resistance, JunctiontoCase
Symbol qJC
Max
Unit
4.16
_C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded……
