器件名称: 2N4921
功能描述: 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
文件大小: 106.89KB 共8页
简 介:ON Semiconductor )
Medium-Power Plastic NPN Silicon Transistors
. . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature:
2N4921 thru 2N4923 *
*ON Semiconductor Preferred Device
Low Saturation Voltage — Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to PNP 2N4918, 2N4919, 2N4920 VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
1 AMPERE GENERAL–PURPOSE POWER TRANSISTORS 40–80 VOLTS 30 WATTS
*MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB 2N4921 40 40 2N4922 60 60 2N4923 80 80 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 1.0 3.0 1.0 Collector Current — Continuous (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating & Storage Junction Temperature Range PD 30 0.24 Watts W/_C _C TJ, Tstg –65 to +150
3 2 1
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77–09 TO–225AA TYPE
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol θJC
Max
Unit
Thermal Resistance, Junction to Case
4.16
_C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual current handling capability of the device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance……
