器件名称: 1N4148
功能描述: FAST SWITCHING DIODES
文件大小: 225.29KB 共4页
简 介:FAST SWITCHING DIODES
1N4148
FEATURES Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation MECHANICAL DATA Case: DO-35 Weight: apprax: 0.13gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified
Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range
1)
Value 75 100 1501)
Unit V V mA
VR V RM I0
IFSM Ptot Tj TS
500 5001) 175 –65 to +175
mA mW °C °C
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
MIC INVESTMENTS (CHINA) COMPANY LIMITED
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C Capacitance at VF = VR = 0 V Voltage Rise when Switching ON tested with 50 mA Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 kHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V
1)
Min. –
Typ. –
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