器件名称: 1N4148
功能描述: SILICON EPITAXIAL PLANAR DIODE
文件大小: 256.08KB 共4页
简 介:1N4148
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
This diode is also available in MiniMELF case with the type designation LL4148
Max. 0.5
Max. 0.45
Max. 1.9
Min. 27.5
Max. 1.9
Min. 27.5
Black Cathode Band Black Part No. Black "ST" Brand
Black Cathode Band
XXX
ST
Max. 3.9
Black Part No.
XXX
Max. 2.9
Min. 27.5
Min. 27.5
Glass Case DO-35 Dimensions in mm
Glass Case DO-34 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 s
Symbol VRM VR IF(AV) IFSM Ptot Tj TS
Value 100 75 200 0.5 1 4 500
1)
Unit V V mA A mW
O
Power Dissipation Junction Temperature Storage Temperature Range
1)
200 - 65 to + 200
C C
O
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/09/2007
1N4148
Characteristics at Tj = 25 OC
Parameter Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 100 A at IR = 5 A Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to ……
