器件名称: 1N4148D2B
功能描述: SILICON EPITAXIAL PLANAR DIODE
文件大小: 207.05KB 共4页
简 介:SILICON EPITAXIAL PLANAR DIODE
1N4148D2A / 1N4148D2B
Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VBR VRWM IO IFSM TJ Tstg Breakdown Voltage Working Peak Reverse Voltage (1) Average Rectified Output Current, TA = 75°C Surge Current, half sine wave, tp = 8.3ms(2) Junction Temperature Range Storage Temperature Range 100V 75V 200mA 2A -65 to +200°C -65 to +200°C
(1) IO is rated at 200mA @ TA = 75°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(Max) does not exceed 175°C (2) TA = 25°C @ IO=0 and VRWM for ten 8.3mS surges at 1 minute intervals.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8271 Issue 2 Page 1 of 4
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SILICON EPITAXIAL PLANAR DIO……
