器件名称: STP11NM80
功能描述: N-channel 800 V - 0.35
文件大小: 467.13KB 共17页
简 介:STB11NM80 - STF11NM80 STP11NM80 - STW11NM80
N-channel 800 V - 0.35 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh Power MOSFET
Features
Type STB11NM80 STF11NM80 STP11NM80 VDSS 800 V 800 V 800 V RDS(on) < 0.40 < 0.40 < 0.40 < 0.40 RDS(on)*Qg 14*nC 14*nC 14*nC 14*nC ID 11 A 11 A 11 A 11 A
3 1
TO-247
DPAK
STW11NM80 800 V
■ ■ ■
Low input capacitance and gate charge Low gate input resistance Best RDS(on) *Qg in the industry
3 1 2
3 1 2
TO-220
TO-220FP
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
The MDmesh associates the multiple drain process with the Company’s PowerMesh horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Table 1.
Device summary
Marking B11NM80 F11NM80 P11NM80 W11NM80 Package DPAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube
Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80
December 2007
Rev 9
1/17
www.st.com 17
Contents
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuit
.................................……
