器件名称: STP11NM80_10
功能描述: N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247
文件大小: 949.78KB 共17页
简 介:STB11NM80, STF11NM80 STP11NM80, STW11NM80
N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, TO-247
Features
Type STB11NM80 STF11NM80 STP11NM80 STW11NM80
■ ■ ■
1
VDSS
RDS(on) max
RDS(on)*Qg
ID
3
2
3
1
DPAK
800 V
< 0.40
14*nC
11 A
TO-247
Low input capacitance and gate charge Low gate input resistance Best RDS(on)*Qg in the industry
1 2
3
3
1
2
TO-220
TO-220FP
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
The MDmesh associates the multiple drain process with the company’s PowerMesh horizontal layout assuring an outstanding low onresistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
$
'
3
!-V
Table 1.
Device summary
Marking B11NM80 F11NM80 P11NM80 W11NM80 Package DPAK TO-220FP TO-220 TO-247 Tube Packaging Tape and reel
Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80
March 2010
Doc ID 9241 Rev 10
1/17
www.st.com 17
Contents
STB/F/P/W11NM80
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . ……